| PART |
Description |
Maker |
| SR02150 SR0220 SR02100-HF-T SR02200-HF-F SR0220-HF |
LOW Vf SCHOTTKY BARRIER RECTIFIER
0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-41
0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-41
0.2 A, 20 V, SILICON, SIGNAL DIODE, DO-41
0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-41
|
Rectron Semiconductor
RECTRON LTD
|
| 1N914BT-10 1N914BT-87Y 1N914BT-12A 1N914BT-85 1N91 |
0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-35
0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-35
0.11 A, 40 V, SILICON, SIGNAL DIODE, DO-35
0.2 A, 250 V, SILICON, SIGNAL DIODE, DO-35
0.15 A, 75 V, SILICON, SIGNAL DIODE, DO-35
0.2 A, 40 V, SILICON, SIGNAL DIODE, DO-34
0.05 A, 40 V, SILICON, SIGNAL DIODE, DO-35
0.11 A, 40 V, SILICON, SIGNAL DIODE, DO-34
0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-35
0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-34
0.05 A, 40 V, SILICON, SIGNAL DIODE, DO-34
|
|
| MDD500-18N1 |
560 A, 1800 V, SILICON, RECTIFIER DIODE
|
IXYS CORP
|
| BY2000 BY1800 BY1600 |
Standard silicon rectifier diodes 3 A, 1800 V, SILICON, RECTIFIER DIODE, DO-201
|
SEMIKRON[Semikron International]
http://
|
| GP10YHE3/73 GP10YHE3/54 GP10W-E3/54 GP10VHE3/73 |
1 A, 1600 V, SILICON, SIGNAL DIODE, DO-204AL ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN
1 A, 1500 V, SILICON, SIGNAL DIODE, DO-204AL
1 A, 1400 V, SILICON, SIGNAL DIODE, DO-204AL
|
Vishay Beyschlag
VISHAY SEMICONDUCTORS
|
| MA141WATX MA142AH 2SK663H |
0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
0.1 A, SILICON, SIGNAL DIODE
30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
|
PANASONIC CORP
|
| FM400109 FM4003-T FM4001-T |
SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC
1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC
|
Rectron Semiconductor
RECTRON LTD
|
| 1800 1820X 1870X |
WILMAR垄芒 Protective Relays - 1800 Series
WILMAR?/a> Protective Relays - 1800 Series
WILMAR Protective Relays - 1800 Series
WILMAR?/a> Protective Relays - 1800 Series
|
Tyco Electronics
|
| 1618-35 |
35 W, 28 V, 1600-1800 MHz common base transistor
35 Watt - 28 Volts, Class C Microwave 1600 - 1800 MHz
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 12A I(C) | FO-57DVAR 晶体管|晶体管|叩| 45V的五（巴西）总裁| 12A条一c）|7DVAR
|
GHZTECH[GHz Technology]
Fairchild Semiconductor, Corp.
|
| VF12 VF5 VF20 |
0.1 A, 12000 V, SILICON, SIGNAL DIODE
0.13 A, 5000 V, SILICON, SIGNAL DIODE
0.09 A, 20000 V, SILICON, SIGNAL DIODE
|
MICROSEMI CORP
|
| FDC6506PNL |
Dual P-Channel Logic Level PowerTrench MOSFET 1800 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Fairchild Semiconductor, Corp.
|
|
